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Electron and hole tunneling resonances of Wannier-Stark states in GaAs/AlAs superlattices

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
267
Identifiers
DOI: 10.1016/0039-6028(92)91195-h

Abstract

Abstract The dependencies of the photocurrent J on the applied bias voltage U in (GaAs) m (AlAs) n short period superlattices (SL's) are measured in this paper. Along with the indirect-in-space optical transitions to the Stark states, additional peaks are observed in J( U), which are possibly due to Zener tunneling resonances for electrons and holes. At higher fields narrow minima are observed which correlate with dark current peculiarities. The comparison with numerical calculations allows the association of the photocurrent minima with τ-X resonant tunneling between well and barrier states.

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