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Cellular growth and In-concentrated inclusions in LEC In-doped GaAs crystals

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
74
Issue
2
Identifiers
DOI: 10.1016/0022-0248(86)90137-5
Disciplines
  • Law

Abstract

Abstract Heavily In-doped GaAs crystals grown by LEC method frequently contain wedge-shaped inclusions, which are observed at the protuberance fronts in the cellular growth region. Their structure and properties were investigated using optical microscopy and cathodoluminescence. The inclusions were found to be InGaAs single crystals having a higher concentration of indium than the matrix and having the same crystallographic orientation as the matrix. They are not generated by segregation at the cell wall caused by the cellular growth itself, but are caused by the constitutional fluctuation in the supercooled melt.

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