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The influence of substrates on the Au/Si interaction

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-3093(05)80311-4
Keywords
  • Part Ii
  • Section 21. Interface Phenomena

Abstract

The influence of amorphous layers such as evaporated a-Si and glow discharge a-Si:H on the outdiffusion of Si through an evaporated Au thin film and its subsequent oxidation in air (80°C) has been studied by means of Auger electron spectroscopy depth profiling. The migration of Si from a-Si:H through the metal is enhanced in comparison with that of a-Si by a factor of approximately 2. Measurements on c-Si(111) and c-Si(111) implanted with H + also reveal a 2 times stronger Si outdiffusion from hydrogenated silicon substrates.

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