Molecular wires have several promising features, that would appear to make them ideal for advanced interconnects in nanoscale electronic devices. We discuss several aspects of the linear and nonlinear conductance of molecular wire interconnects. Topics include energy dependence of molecular conductance, resonant tunneling behavior, control of conductance by molecular structure and geometry, length dependence including the tunneling regime energetics. Design rules using molecular interconnects will differ substantially from those with more standard, lithographically structured silicon interconnects. In particular, the dissipation mechanisms will differ, both tunneling and ballistic regimes should be available, coulomb blockade and staircase behavior will be observed (but under differing conditions) and fabrication of gate electrodes is a challenge.