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Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers

Authors
Publication Date
Keywords
  • Gan
  • Mg-Doped Gan
  • Electrical Characterization
  • Thermal Admittance Spectroscopy
  • Physical
  • Chemical
  • Mathematical & Earth Sciences :: Physics [G04]
  • Physique
  • Chimie
  • Mathématiques & Sciences De La Terre :: Physique [G04]

Abstract

The ac characteristics of GaN : Mg and undoped GaN layers, grown by MOVPE on sapphire substrates, are measured for a wide range of temperature and bias conditions, in order to investigate the effect of the magnesium-related level on the transport properties. Two peaks, whose height and position depend on the measurement temperature, are observed in the admittance curves (G/ω versus frequency) of the Mg-doped samples, whereas only one peak appears in undoped samples. The study of the frequency dependence of the impedance, with a model including the two metallic Au/GaN junctions, the GaN layer itself, shows that, besides the effect of the differential resistance of the layer which plays a role in both sample types, the presence of a Mg-related deep level contributes to the observed variations of the peaks in the admittance curves of the p-doped samples. Results of a theoretical steady-state and small-signal analysis based on numerical modelling of the Au/GaN/Au heterostructure complete our analysis.

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