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Growth and magnetic properties of novel ferromagneticsemiconductor (Zn, Cr)Te

Authors
Journal
Science and Technology of Advanced Materials
1468-6996
Publisher
Informa UK (Taylor & Francis)
Publication Date
Volume
6
Issue
6
Identifiers
DOI: 10.1016/j.stam.2005.05.020
Keywords
  • Magnetic Semiconductors
  • Spintronics
  • Molecular Beam Epitaxy
  • Ii–Vi Compounds
  • Ferromagnetism
  • Magnetic Circular Dichroism
  • Carrier Doping
  • Double Exchange Interaction
Disciplines
  • Physics

Abstract

Abstract Magnetic properties of a novel ferromagnetic semiconductor (Zn, Cr)Te were investigated. Zn 1− x Cr x Te thin films, both without and with the additional hole doping by nitrogen, were grown by molecular beam epitaxy. In the magnetization measurement on Zn 1− x Cr x Te without carrier doping, the ferromagnetic behaviors such as a hysteresis loop in the magnetization vs. magnetic field curve were observed. Similar hysteretic behaviors in the field dependence were reproduced in the magnetic circular dichroism measurement. The ferromagnetic transition temperature T C deduced from Arrott plot increased almost linearly with Cr composition with the maximum T C=275 K at a Cr composition of x=0.17. The ferromagnetic behaviors observed in the undoped samples were found to be suppressed upon the p-type doping with nitrogen. These experimental findings are discussed based on the double exchange mechanism and the suppression of ferromagnetism by the hole doping is interpreted as due to the shift of the Fermi level in the Cr 3 d level with the acceptor doping.

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