Affordable Access

Publisher Website

On resonant tunneling

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
122
Issue
1
Identifiers
DOI: 10.1016/0039-6028(82)90060-7
Disciplines
  • Physics

Abstract

Abstract Localized electron states in oxides adjacent to metals hybridize with conduction electron states forming interface states, which at the localized site have an amplitude resonantly enhanced over the amplitude of the conduction electron states. The interface states mediate a continuous transition between the metal and the semiconducting or insulating oxide. Resonant tunneling via these interface states to an opposing metal surface can dominate over direct and intermediate-state tunneling. Resonant tunneling is obstructed by the correlation (Coulomb) energy which causes voltage, temperature and time dependencies. The obstruction increases with distance of the localized state from the metal and this increased obstruction causes the transition from resonant to intermediate-state tunneling. This corresponds to a space-wise metal-insulator transition. In oxides, like Nb 2O 5, the correlation energy is small and the hybridization is strong and thus resonant tunneling through localized states at the Fermi energy can account for various tunnel anomalies observed in the normal or superconducting state.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

A lateral resonant tunneling FET

on Superlattices and Microstructu... Jan 01, 1988

Dark channels in resonant tunneling transport thro...

on The Journal of Chemical Physic... Jul 14, 2008
More articles like this..