Affordable Access

Publisher Website

Surface modification on low dielectric constant material—methylsilsesquioxane

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
441
Identifiers
DOI: 10.1016/s0040-6090(03)00951-9
Keywords
  • Thermal Stability
  • Oxygen Thermal Treatment
  • Space-Charge-Limited Current
  • Poole–Frenkel Mechanism
Disciplines
  • Chemistry
  • Physics

Abstract

Abstract The physical properties and thermal stability of surface modified methylsilsesquioxane (MSQ) were studied. Various post-treatments, such as thermal oxygen, thermal N 2O and oxygen plasma, were adopted on the cured MSQ film as the surface-modification process. The Cu/TaN/MSQ/Si metal-insulation-semiconductor capacitors with various surface modified MSQ films were prepared to measure the dielectric constant, capacitance–voltage and current–voltage characteristics. X-Ray photoelectron spectroscopy and Fourier transform infrared spectroscopy were performed in order to understand the chemical composition of the modified film. From the above measurements, we find the best surface treatment condition for MSQ in Cu metallization.

There are no comments yet on this publication. Be the first to share your thoughts.