Affordable Access

Publisher Website

Enhanced characterization of ITO films deposited on PET by RF superimposed DC magnetron sputtering

Authors
Publisher
Elsevier B.V.
Publication Date
Volume
518
Issue
11
Identifiers
DOI: 10.1016/j.tsf.2009.08.017
Keywords
  • Rf Superimposed Dc
  • Indium Tin Oxide
  • Flexible Substrate
  • Bending Test

Abstract

Abstract Tin-doped indium oxide (ITO) films were deposited on polyethylene terephthalate substrates by RF superimposed DC magnetron sputtering using an ITO target composed of In 2O 3 (90 wt.%):SnO 2 (10 wt.%). The total sputtering power was maintained at 70 W and the power ratio of RF/(RF + DC) was varied from 0 to 100% in steps of 25%. The discharge voltage and deposition rate decreased with increasing RF/(RF + DC) power ratio. The ITO film deposited at a 50% RF portion of the total power showed the lowest resistivity (3.18 × 10 − 4 Ωcm), high transmittance (87.5%) and relatively good mechanical durability, which was evaluated using bending and scratch tests.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Properties of ITO films deposited by RF superimpos...

on Current Applied Physics Jan 01, 2009

Electrical and structural properties of In-doped Z...

on Journal of Physics and Chemist... Jan 01, 2010

Influence of negative metal ion bombardment on the...

on Journal of Non-Crystalline Sol... Jan 01, 2003

Comparative study of ITO layers deposited by DC an...

on Journal of Non-Crystalline Sol... Jan 01, 2006
More articles like this..