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Passivation of titanium by hydrogen in silicon

Authors
Journal
Applied Physics Letters
0003-6951
Publisher
American Institute of Physics
Publication Date
Keywords
  • Annealing - Deep Level Transient Spectroscopy - Elemental Semiconductors - Hydrogenation - I

Abstract

Interactions of hydrogen with titanium have been studied in Ti-doped n-type crystalline Si using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen plasma treatments of the samples at room temperature have resulted in the suppression of DLTS signals due to interstitial Ti atoms (Tii) and the appearance of three strong DLTS peaks, which are related to three different Ti-H defects. After annealing of the hydrogenated samples at 150 °C in nitrogen, the signals due to Tii and two of the three H-related defects were not detected in the spectra showing that almost complete passivation of all electrically active defects occurred.

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