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Interface disorder and the inhomogeneous broadening of optical spectra in semiconductor, quantum wells

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
13
Issue
4
Identifiers
DOI: 10.1006/spmi.1993.1084
Disciplines
  • Physics

Abstract

Abstract The photoluminescence linewidth of a CdTe/Cd 1- x Mn x Te structure, grown by molecular beam epitaxy, containing quantum wells of width 26, 37 and 45Å separated by large (250Å) barriers, was investigated. The high quality of the quantum well structure was confirmed by X-ray topography, X-ray rocking curves and narrow photoluminescence lines. It is shown that these results are consistent with small scale interface roughness resulting from clusters involving pairs or triplets of Mn 2+ ions forming into small islands.

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