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Alpha-particle-induced charge collection in scaled dram cells with advanced structures

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
33
Issue
11
Identifiers
DOI: 10.1016/0038-1101(90)90124-w

Abstract

Abstract Alpha-particle-induced charge collection in scaled DRAM cells with advanced structures are experimentally examined. It is concluded that the storage charge necessary to avoid the soft-errors, Q C, is proportional to the diagonal length of the depletion region in most types of scaled DRAM cells including PMOS cells. For some types of DRAM cells, however, additional effects on the Q C should be considered: (a) for DRAM cells with LOCOS isolation, the collected charge enhancement caused by the charge multiplication at the LOCOS junction edge becomes prominent with scaling, (b) for substrate-plate SPC (Sheat Plate Capacitor) trench cells, the potential slope towards the surface caused by the p + plate regions enhance the charge collection, (c) for PMOS cells, the collected charge enhancement through the charge multiplication can be weaker than that in NMOS cells.

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