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Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

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  • Gaas/Aias Superlattices
  • Doped Superlattices
  • Semiconductors


We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V (F )). As the peak-valley ratio in the V (F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V (F) curves into consideration, gives a good agreement with the experimental results.

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