Affordable Access

Publisher Website

Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
97
Issue
2
Identifiers
DOI: 10.1016/0022-0248(89)90208-x

Abstract

Abstract The manufacture of advanced optoelectronic devices and circuits requires the ability to overgrow contoured substrates, in order to isolate component function and for interfacing. To gain an understanding of the MOCVD growth habit effects of InP and (InGa)As on contoured and/or masked substrates, experiments have been performed employing periodic InP/(InGa)As heterostructures to identify the form of the epitaxial surface during the various stages of growth. Wet etched mesas with {111>38;}A and {011} sidewalls and dry etched mesas with {011} sidewalls have been used as substrates. It is found that InP and (InGa)As are reluctant to nucleate on either {111}A or {111}B surfaces and that the mesa height is a factor in determining the growth profile. Overgrowth morphology on the β-mesas is consistently superior to that on α-mesas. Dry etched mesas yield a higher degree of epi-layer uniformity than do wet etched mesas.

There are no comments yet on this publication. Be the first to share your thoughts.