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Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

Authors
Journal
Nano Letters
1530-6984
Publisher
American Chemical Society
Publication Date
Volume
13
Issue
11
Identifiers
DOI: 10.1021/nl402570u
Keywords
  • Letter

Abstract

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current–voltage properties. We report accurate on-top imaging and I–V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I–V properties with a very small spread in measured values compared to standard techniques.

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