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Interface compound formation in Ni/In thin film couples

Authors
Journal
Vacuum
0042-207X
Publisher
Elsevier
Publication Date
Volume
41
Identifiers
DOI: 10.1016/0042-207x(90)93947-h

Abstract

Abstract The perturbed γγ angular correlation method has been applied to study compound formation in Ni/In thin film couples. During an isochronal anneal cycle a variety of electric field gradient situations has been observed at 111In/ 111Cd probe nuclei, corresponding to the formation of different Ni/In compounds. Structure and stoichiometry of the compounds has been determined by comparison with bulk samples of the stable Ni/In alloys.

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