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Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
311
Issue
10
Identifiers
DOI: 10.1016/j.jcrysgro.2009.01.060
Keywords
  • A3. Metalorganic Chemical Vapor Deposition
  • B1. Nitrides
  • B1. Semiconducting Iii–V Materials
Disciplines
  • Physics

Abstract

Abstract We demonstrate homoepitaxial growth of GaInN/GaN-based green (500–560 nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500 nm, a minimum InN-fraction of ∼14% is needed for both, a- and m-plane quantum wells (QWs), while ∼8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction.

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