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Chemical compatibility of vacuum plasma sprayed (VPS) metal cartridges with various semiconductor materials

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-0248(98)01173-7
Disciplines
  • Chemistry

Abstract

Abstract Chemical compatibility is of critical importance in the case of an ampoule failure during crystal growth in a reduced-gravity flight experiment. This study simulated the event of total ampoule failure to test the chemical compatibility between semiconductor materials and vacuum plasma sprayed (VPS) refractory metal cartridges. In this investigation, two VPS refractory metal cartridge materials, Mo41Re and Ta10W, were tested for compatibility with four semiconductor materials, CdZnTe, PbSnTe, ZnSe, and GaSb. During testing, a refractory metal cartridge sample was imbedded in a semiconductor material and held at an elevated temperature for 24 h. After testing, the samples were analyzed optically and using scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) to evaluate the extent of any metal loss or reaction and composition of any reaction products formed.

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