Affordable Access

Physical modeling of microwave transistors using a full-band/full-wave simulation approach

Authors
Publisher
IEEE
Publication Date

Abstract

In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results

There are no comments yet on this publication. Be the first to share your thoughts.