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Epitaxial GaAs grown directly on (100)Si by low pressure MOVPE using low temperature processing

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
77
Identifiers
DOI: 10.1016/0022-0248(86)90344-1

Abstract

Abstract Spectacular GaAs layers were grown directly on (100)Si by low pressure MOVPE using low temperature processing. The layers were largely of single domain with net carrier concentrations less than 10 14 cm −3. Intentionally doped n-type layers ( N d ⋍ 10 16 cm −13) showed room temperature electron mobility of 5700 cm 2/V·s. The layers were of high structural, optical, and device quality, and exhibited intrinsic photoluminescence (PL) at room temperature.

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