Affordable Access

Publisher Website

Luminescence of narrow RIE etched In1−xGaxAs/InP and GaAs/Ga1−xAlxAs quantum wires

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
267
Identifiers
DOI: 10.1016/0039-6028(92)91131-t
Disciplines
  • Physics

Abstract

Abstract We present low temperature optical data obtained on narrow quantum wires, fabricated with reactive ion etching and MOCVD overgrowth, in both In 1− x Ga x As/InP and GaAs/Ga 1− x Al x As systems. One-dimensional quantum confinement effects are observed in both cases for the lowest lateral sizes ( L x ), in which carrier lifetimes remain of the order of one nanosecond. For In 1− x Ga x As/InP wires ( L x down to 15 nm, quantum shifts of the photoluminescence peak (up to 30 meV) are observed. For GaAs/Ga 1− x Al x As wires ( L x down to 20 nm). We present photoluminescence excitation spectra showing additional lateral confinement effects, concerning mainly the polarization of the observed transitions.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Exciton binding energy in V-shaped GaAs–Ga1− xAlxA...

on Solid State Communications Jan 01, 2001

Impurity bands in Ga1- xAlxAs/GaAs quantum wells

on Solid State Communications Jan 01, 1987

The effects of pressure and barrier height on dono...

on Physica B Condensed Matter Jan 01, 2010

Optical phonon quantum levels in GaAs/Ga1−xAlxAs s...

on Superlattices and Microstructu... Jan 01, 1985
More articles like this..