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Resolution of superlattice structures with backscattered electrons in a scanning electron microscope

Authors
Journal
Ultramicroscopy
0304-3991
Publisher
Elsevier
Publication Date
Volume
50
Issue
1
Identifiers
DOI: 10.1016/0304-3991(93)90093-d

Abstract

Abstract The Monte Carlo simulation of electron interaction with GaAs/AlAs superlattices of variable periodicities allows the calculation of the backscattered electron contrast for different energies ( E 0 = 25, 12.5, 8 and 4 keV). The following main results have been obtained. The resolution of a superlattice structure achievable with backscattered electrons mainly depends on the brightness of the source: for a proper signal-to-noise ratio it is possible, apart from the size of the generation volume, to get information about the beam impact point. For a well defined periodicity of the superlattice there is an energy giving a maximum contrast. According to a simple diffusion theory of backscattered electrons, the optimal energy is the one providing a depth of complete diffusion of the order of the periodicity of the superlattice.

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