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Characteristics ofa-plane GaN with the SiNxinsertion layer grown by metal-organic chemical vapor deposition

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
310
Issue
23
Identifiers
DOI: 10.1016/j.jcrysgro.2008.07.058
Keywords
  • A1. Crystallities
  • A3. Metalorganic Chemical Vapor Deposition
  • B1. Nitrides
  • B2. Semiconducting Iii–V Materials
Disciplines
  • Chemistry

Abstract

Abstract We utilized in-situ-grown SiN x insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiN x layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiN x insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiN x insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers.

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