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Electronic structure of (100) semiconductor heterojunctions

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
168
Identifiers
DOI: 10.1016/0039-6028(86)90885-x

Abstract

Abstract The electronic structure of (100) abrupt semiconductor heterojunctions has been analysed by means of a self-consistent tight-binding method. Band offsets for the junctions GaAs-AlAs, InAs-GaSb and GaSb-InAs have been calculated and compared with the experimental evidence.

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