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The study on high efficient AlxGa1− xAs/GaAs solar cells

Authors
Journal
Solar Energy Materials and Solar Cells
0927-0248
Publisher
Elsevier
Publication Date
Volume
68
Issue
1
Identifiers
DOI: 10.1016/s0927-0248(00)00348-2
Keywords
  • Algaas
  • Gaas
  • Solar Cell
Disciplines
  • Chemistry
  • Physics

Abstract

Abstract The investigation of Al x Ga 1− x As/GaAs solar cells is carried out by means of both metalorganic chemical vapor deposition (MOCVD) and liquid-phase epitaxial (LPE) technique. The measurements of illuminated I– V characteristics, dark I– V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's laboratory. The measuring results revealed that the quality of materials in GaAs solar cell's structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also very strong. The 21.95% (AM0, 2×27 cm 2, 25°C) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices.

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