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CH4/H2RIE of InGaAsP/InP materials: An application to DFB laser fabrication

Authors
Journal
Microelectronic Engineering
0167-9317
Publisher
Elsevier
Publication Date
Volume
21
Identifiers
DOI: 10.1016/0167-9317(93)90082-g
Disciplines
  • Chemistry

Abstract

Abstract In this paper we present the characterization and application of the CH 4/H 2 RIE technique for fabrication of optoelectronic devices on InGaAsP/InP materials. We obtained depth damage profile by Photoluminescence (PL) measurements and chemical etching. Using appropriate processing parameters a 15 nm deep damaged layer was measured on InGaAsP. Three CH 4/H 2 RIE process steps were successfully applied to the fabrication of emitting at 1.55 μm BRS-DFB lasers. The devices demonstrated cw operation at a threshold of 24 mA with a side mode suppression of about 30 dB.

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