Abstract In this paper we present the characterization and application of the CH 4/H 2 RIE technique for fabrication of optoelectronic devices on InGaAsP/InP materials. We obtained depth damage profile by Photoluminescence (PL) measurements and chemical etching. Using appropriate processing parameters a 15 nm deep damaged layer was measured on InGaAsP. Three CH 4/H 2 RIE process steps were successfully applied to the fabrication of emitting at 1.55 μm BRS-DFB lasers. The devices demonstrated cw operation at a threshold of 24 mA with a side mode suppression of about 30 dB.