Affordable Access

Publisher Website

Population hole burning on the4 f 7 ( 8S 7 2 ) → 4 f 6 5 d (Γ 8)zero-phonon transition in MBE films of CaF2:Eu2 +

Authors
Journal
Journal of Luminescence
0022-2313
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-2313(95)00099-2
Keywords
  • Chapter 1. Holeburning

Abstract

Abstract Spectral holes due to the redistribution of population among the ground state hyperfine levels have been detected on the 413 nm zero-phonon transition in CaF 2:Eu 2 + MBE films grown on Si(1 1 1), in magnetic fields in excess of 3 T. These are the first long-lived (up to minutes) population holes reported for a paramagnetic ion. The hole lifetime results from phonon-induced transitions among hyperfine levels of the Eu 2 + ground electron spin states. The central hole linewidth of 40 MHz is probably determined by the EuF superhyperfine interaction which leads to spectral diffusion due to F nuclear spin flips. The hole pattern contains a narrow central hole (40 MHz) and side holes and antiholes which result from the hyperfine splittings in the ground and excited states.

There are no comments yet on this publication. Be the first to share your thoughts.