Affordable Access

Publisher Website

Basic equations of gunn domain dynamics

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
24
Issue
10
Identifiers
DOI: 10.1016/0375-9601(67)90823-7

Abstract

Abstract Equations are presented and discussed, describing the dynamic (time-dependent) behaviour of electric high field domains as a function of bias voltage in Gunn-effect semiconductors when diffusion is neglected. Numerical solutions for the constant bias case illustrate the time-dependent growing of an initial perturbation charge dipole to a steady-state domain.

There are no comments yet on this publication. Be the first to share your thoughts.