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Optical and electrical properties of zinc oxide thin films with low resistivity via Li–N dual-acceptor doping

Authors
Journal
Journal of Alloys and Compounds
0925-8388
Publisher
Elsevier
Publication Date
Volume
509
Issue
20
Identifiers
DOI: 10.1016/j.jallcom.2011.03.028
Keywords
  • Ultraviolet Emission
  • Electronic Properties
  • Li–N Dual-Acceptor Doping
  • Zinc Oxide Thin Films
  • Successive Ionic Layer Adsorption And Reaction
Disciplines
  • Physics

Abstract

Abstract Zinc oxide thin films with low resistivity have been deposited on glass substrates by Li–N dual-acceptor doping method via a modified successive ionic layer adsorption and reaction process. The thin films were systematically characterized via scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, ultraviolet-visible spectrophotometry and fluorescence spectrophotometry. The resistivity of zinc oxide film was found to be 1.04 Ω cm with a Hall mobility of 0.749 cm 2 V −1 s −1 and carrier concentration of 8.02 × 10 18 cm −3. The Li–N dual-acceptor doped zinc oxide films showed good crystallinity with prior c-axis orientation, and high transmittance of about 80% in visible range. Moreover, the effects of Li doping level and other parameters on crystallinity, electrical and ultraviolet emission of zinc oxide films were investigated.

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