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Thermal Memory Effects on the Linearity of a GaAs PHEMT

Publication Date
  • Ing-Inf/01 Elettronica


This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation. The analysis is based on an accurate distributed model modified in order to take into account for the dynamic thermal behaviour under large signal operation. The results show a reduction of the intermodulation product in response to a reduction of the two tones frequency spacing, in agreement with the analytical treatment.

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