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Evaluation of gate oxide breakdown effect on cascode class E power amplifier performance

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
51
Issue
8
Identifiers
DOI: 10.1016/j.microrel.2011.03.027
Disciplines
  • Design

Abstract

Abstract A CMOS cascode class E power amplifier has been designed at 5.2 GHz. Its RF performances such as output and power-added efficiency have been examined in ADS simulation. The layout parasitic is accounted for in the post-layout simulation. Time-dependent drain–source voltage waveforms indicate that the drain of cascode transistor is subject to much higher voltage stress than that of main transistor. Analytical equation of output power including impact of gate-oxide breakdown is developed and compared with RF simulation results. Good agreement between the model predictions and ADS simulation is obtained. The gate–drain breakdown of the cascode transistor decreases the output power and power-added efficiency of the power amplifier significantly when the breakdown resistance is below 1 kΩ.

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