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High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

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Publisher
IEEE
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Abstract

Focused ion beam etching has been used to pattem dc SQUIDS into previously characterised template bi-epitaxial glain boundary junctions. Using this technique the screening parameter can be optimised for a chosen tempem- (in our cwe 30 K). Electrical characteristics, including noise measmments, am presented. A minimal white noise level of 22 µO,.Hz-'n (1.8~102' J.Hz-') has been obtained at 20 K. Using bias c m n t modulation the llf noise could almost completely be suppressed down to 1 Hz in the entixe tempemtam range (10-65 K).

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