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Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition

Authors
Journal
Materials Science in Semiconductor Processing
1369-8001
Publisher
Elsevier
Publication Date
Volume
5
Identifiers
DOI: 10.1016/s1369-8001(02)00108-7
Keywords
  • Anisotropic Chemical Vapor Deposition
  • Plasma Cvd
  • Cu
  • Ulsi
  • Interconnect
Disciplines
  • Chemistry

Abstract

Abstract In order to fill small via-holes and trenches for ultralarge scale integration (ULSI) interconnects, we propose an anisotropic chemical vapor deposition (CVD) method by which Cu is deposited at a high rate at the bottom of a trench compared to that at its side wall. The ion irradiation is the key to realize the anisotropic CVD. The anisotropy, which is a ratio of deposition rate at the bottom of a trench to that at its side wall, tends to increase with energy as well as flux of ions (H 3 + is the predominant ion) impinging on the substrate surface, while it does not depend on H flux. We demonstrate promising anisotropic filling of trenches by the anisotropic CVD method.

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