Affordable Access

Luminescence and defect studies of YAlO3:Dy3+, Sm3+single crystals exposed to 100 MeV Si7+ion beam

Authors
Journal
Journal of Luminescence
0022-2313
Publisher
Elsevier
Volume
132
Issue
10
Identifiers
DOI: 10.1016/j.jlumin.2012.04.030
Keywords
  • Luminescence
  • Ion Irradiation
  • Single Crystals
  • Yalo3
  • Dy3+
  • Sm3+

Abstract

Abstract Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm3+ and Dy3+) activated YAlO3 single crystals have been induced with 100MeV Si7+ ions with fluence of 7.81×1012ionscm−2. Prominent IL and PL emission peaks in the range 550–725nm in Sm3+ and 482–574nm in Dy3+ were recorded. Variation of IL intensity in Dy3+ doped YAlO3 single crystals was studied in the fluence range 7.81×1012–11.71×1012ionscm−2. IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2×1012ionscm−2 on pure and doped crystals at a warming rate of 5°Cs−1 at room temperature. Pure crystals show two glow peaks at 232 (Tg1) and 328°C (Tg2). However, in Sm3+ doped crystals three glow peaks at 278 (Tg1), 332 (Tg2) and 384°C (Tg3) and two glow peaks at 278 (Tg1) and 331°C (Tg2) in Dy3+ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model.

There are no comments yet on this publication. Be the first to share your thoughts.