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Magnetic field effects in strongly localized quasi-1D MOSFETs

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
196
Identifiers
DOI: 10.1016/0039-6028(88)90675-9

Abstract

Abstract We have measured the conductance as a function of gate voltage magnetic field, field orientation, and temperature of a quasi-1D silicon MOSFET in the strongly localized regime. At low temperatures and gate voltages, small changes in gate voltage produce large conductance fluctuations. The pattern of the fluctuations is changed dramatically as the magnetic field is increased, with some peaks vanishing and others growing out of the background. Much of the field dependence of the peak positions for different orientations and temperatures are due to Zeeman energy shifts.

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