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Effect of the gas pressure during deposition on the optical properties of HOMOCVD a-Si:H thin films

Authors
Journal
Solar Energy Materials and Solar Cells
0927-0248
Publisher
Elsevier
Publication Date
Volume
36
Issue
1
Identifiers
DOI: 10.1016/0927-0248(94)00164-n
Disciplines
  • Chemistry

Abstract

Abstract A detailed study of the dependence of the optical constants of homogenous chemical vapor deposited hydrogenated amorphous silicon on the preparation conditions is reported in this work. It is established that the optical band gap, E g refractive index, n, at a wavelength of 2000 nm, coefficient B derived from the Tauc plot, and the inhomogeneity, Δd, depend on the pressure of the gases during deposition. The optical gap, growth rate, and inhomogeneity increase with increasing gas pressure. These parameters also depend on the substrate temperature and growth rate. These results are discussed in terms of the gas-phase reactions.

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