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Si/SiGe n-type inverted modulation doping using ion implantation

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
369
Identifiers
DOI: 10.1016/s0040-6090(00)00873-7
Keywords
  • Silicon-Germanium
  • Chemical Vapour Deposition
  • Inverted
  • Two Dimensional Electron Gases
  • Ion Implantation
Disciplines
  • Chemistry
  • Physics

Abstract

Abstract Inverted modulated-doped Si/Si 1− x Ge x wafers have been prepared using ex-situ ion implantation of a virtual substrate for the doping followed by cleaning and the regrowth of the silicon quantum well in the growth system. This fabrication scheme attempts to circumvent the main problem in the growth of inverted modulation doped structures by chemical vapour deposition, which is the surface segregation and diffusion of n-type dopant causing high dopant densities in all subsequent layers after the introduction of n-type dopant to the growth chamber. Magneto-transport results will be shown for modulation-doped field effect transistor (MODFET) samples which have 1.7 K mobilities up to 73 000 cm 2/V s for carrier concentrations of 4.25×10 11 cm −2. Clear Shubnikov-de Haas oscillations and quantum Hall effect plateaux are visible demonstrating the quality of the samples produced using the technique.

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