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Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
357
Identifiers
DOI: 10.1016/j.jcrysgro.2012.07.037
Keywords
  • A1. High Resolution X-Ray Diffraction
  • A1. Threading Dislocation
  • A1. Transmission Electron Microscopy
  • A3. Molecular Beam Epitaxy
  • B1. Gan On Si Substrate
  • B3. High Electron Mobility Transistors

Abstract

Abstract A transmission electron microscopy (TEM) study was carried out on a series of AlGaN/GaN high-electron mobility transistor (HEMT) structures grown by plasma assisted molecular beam epitaxy (PA-MBE) on Si (111). Threading dislocation (TD) behavior and density were investigated for three heterostructures using an AlN/GaN superlattice and/or differently strained GaN layers. Threading dislocation densities (TDDs) were measured by TEM (at different depths) and high resolution x-ray diffraction (HRXRD) allowing one of the most complete and few studies so far, presenting separated values on edge, screw and mixed type TDs quantities.

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