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Characterization of phosphorus in layer semiconductor GaSe

Authors
Journal
Journal of Luminescence
0022-2313
Publisher
Elsevier
Publication Date
Volume
79
Issue
2
Identifiers
DOI: 10.1016/s0022-2313(98)00031-3
Keywords
  • Bulk Semiconductor
  • Impurity Level
  • Gase

Abstract

Abstract Radiative recombination mechanisms in P-doped p-GaSe have been investigated by using photoluminescence (PL) measurements. The PL spectra related to impurity level are dominated by the emission band at 1.355 eV. The temperature dependences of the PL intensity, peak energy, and full-width at half-maximum are characterized by the configuration coordinate model. The acceptor level located at about 0.45 eV above the valence band is detected by using Hall effect and deep-level transient spectroscopy measurements. This acceptor level is probably associated with the 1.355 eV emission band formed by P atoms.

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