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One-sidewall-seeded epitaxial lateral overgrowth ofa-plane GaN by metalorganic vapor-phase epitaxy

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
311
Issue
10
Identifiers
DOI: 10.1016/j.jcrysgro.2009.01.036
Keywords
  • A3. Metalorganic Vapor-Phase Epitaxy
  • B1. Nitrides
  • B1. Selective Epitaxy
  • B2. Semiconducting Iii–V Materials

Abstract

Abstract The selective regrowth of GaN during sidewall-seeded epitaxial lateral overgrowth was performed. In addition to adjusting the V/III ratio, control of offset angle of the sidewall was found to be effective for realizing one-sidewall-seeded a-plane (1 1 2¯ 0) GaN on r-plane (1 1¯ 0 2) sapphire. The number of coalescence regions on the grooves was reduced, and threading-dislocation and stacking-fault densities as low as 10 6–10 7 cm −2 and 10 3–10 4 cm −1, respectively, were successfully realized.

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