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Defect structure and stability of a-Si:H by modulated photocurrent studies

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
114
Identifiers
DOI: 10.1016/0022-3093(89)90682-0
Keywords
  • Section 16. Thermal Equilibrium

Abstract

Abstract In undoped a-Si:H metastable changes of gap state profiles with light-soaking and reverse bias annealing have been investigated by modulated photocurrent measurements. The gap state distribution above midgap shows a correlation with the Fermi level position, with a minimum at E f and in addition to the midgap defect band a peak above E f. Light-soaking increases the overall defect density whereas after reverse bias annealing only the band above E f is increased and the DOS below E f is quenched. The experimental results are inconsistent with the idea of two defect bands produced by one set of defects in different charge states.

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