Affordable Access

Publisher Website

Defect structure and stability of a-Si:H by modulated photocurrent studies

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
114
Identifiers
DOI: 10.1016/0022-3093(89)90682-0
Keywords
  • Section 16. Thermal Equilibrium

Abstract

Abstract In undoped a-Si:H metastable changes of gap state profiles with light-soaking and reverse bias annealing have been investigated by modulated photocurrent measurements. The gap state distribution above midgap shows a correlation with the Fermi level position, with a minimum at E f and in addition to the midgap defect band a peak above E f. Light-soaking increases the overall defect density whereas after reverse bias annealing only the band above E f is increased and the DOS below E f is quenched. The experimental results are inconsistent with the idea of two defect bands produced by one set of defects in different charge states.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments