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High performance AlxGa1− xN-based avalanche photodiodes

Authors
Journal
Photonics and Nanostructures - Fundamentals and Applications
1569-4410
Publisher
Elsevier
Publication Date
Volume
5
Identifiers
DOI: 10.1016/j.photonics.2007.05.001
Keywords
  • Algan
  • Solar-Blind
  • Avalanche
  • Schottky
Disciplines
  • Design
  • Physics

Abstract

Abstract We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 820 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. We improved the device performance by designing different epitaxial wafer structure with thinner active multiplication layer. We compare the resulting fabricated devices from these wafers in terms of dark current, photoresponse, avalanche gain performances.

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