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An analytical model for current–voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
54
Issue
1
Identifiers
DOI: 10.1016/j.sse.2009.09.026
Keywords
  • Algan/Gan
  • Hemts
  • Self-Heating
  • Analytical Thermal Model

Abstract

Abstract A 2-D analytical thermal model for the I– V characteristics of AlGaN/GaN is presented. The effect of self-heating is studied by investigating the temperature effects on various parameters: the 2DEG sheet carrier density, the Fermi level, the electron mobility, the saturation velocity and the critical field. After incorporating self-heating effect in calculations of current–voltage characteristics, our results agreed well with published experimental data.

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