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Quantum transport in a mesoscopic ring: Evidence of an OR gate

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
149
Identifiers
DOI: 10.1016/j.ssc.2009.06.018
Keywords
  • A. Mesoscopic Ring
  • D. Conductance
  • D. [Formula Omitted]Characteristic
  • D. Or Gate
Disciplines
  • Design
  • Physics

Abstract

Abstract We explore the OR gate response in a mesoscopic ring threaded by a magnetic flux ϕ . The ring is symmetrically attached to two semi-infinite one-dimensional metallic electrodes, and two gate voltages, V a and V b , are applied in one arm of the ring; these are treated as the two inputs of the OR gate. All the calculations are based on the tight-binding model and the Green’s function method, which numerically compute the conductance–energy and current–voltage characteristics as functions of the gate voltages, ring-to-electrode coupling strengths and magnetic flux. Our theoretical study shows that, for ϕ = ϕ 0 / 2 ( ϕ 0 = c h / e , the elementary flux-quantum), a high output current (1) (in the logical sense) appears if one or both the inputs to the gate are high (1), while if neither input is high (1), a low output current (0) appears. It clearly demonstrates the OR gate behavior, and this aspect may be utilized in designing an electronic logic gate.

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