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Anisotropy of quantum-size effects in (001)- and (111)-oriented GaAs/Al0.3Ga0.7As multiple-quantum-wells

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
71
Issue
12
Identifiers
DOI: 10.1016/0038-1098(89)90726-6
Disciplines
  • Physics

Abstract

Abstract We have investigated the anisotropy of quantum-size effects in (001)- and (111)-oriented GaAs/Al 0.3Ga 0.7As multiple-quantum-wells (MQW's) with the GaAs layer thickness ranging from 15 to 150 Å and the fixed AlGaAs layer thickness of 200 Å by using photoluminescence and photoluminescence-exciton spectroscopy at 4.2 K. The light-hole-exciton energy is not affected by the quantization direction whole over the thickness range of the GaAs layer, while the heavy-hole-exciton energy of the (111)-MQW is lower than that of the (001)-MQW with the same structure. The energy difference increases from ∼ 2 to ∼ 24 meV as the GaAs layer thickness decreases from 150 to 15 Å, which is consistent with the results calculated on the basis of an effective-mass approximation assuming the heavy-hole effective-mass anisotropy of m hh (001): m hh (111) = 0.34:0.9 for GaAs.

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