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Comparison of the dispersion parameters from time-of-flight and photo-induced midgap absorption measurements on sputtered a-Si:H

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
42
Issue
7
Identifiers
DOI: 10.1016/0038-1098(82)90637-8

Abstract

Abstract We present the results of a combined study of photo-induced midgap absorption and time-of-flight measurements on samples of a-Si:H prepared by the sputtering process. The samples were characterized by a low density of states at the Fermi level and activated band transport. Both time-of-flight and induced absorption decay measurements reveal identical temperature dependence of the dispersion parameter with a transition from dispersive to non-dispersive statistics near 300 K.

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