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Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0 0 0 1)

Journal of Crystal Growth
Publication Date
DOI: 10.1016/j.jcrysgro.2005.01.034
  • A1. High Resolution X-Ray Diffraction
  • A1. Interfaces
  • A1. Stresses
  • A3. Molecular Beam Epitaxy
  • B1. Nitrides
  • B2. Semiconducting Indium Compounds


Abstract The heteroepitaxy of In-face InN on Ga-face GaN (0 0 0 1) by nitrogen RF plasma source molecular beam epitaxy, using a two-step growth process, has been investigated. InN nucleation is enhanced at low substrate temperatures and smooth continuous nucleation layers can be grown at 300–350 °C, which provide the necessary template for overgrowing films at a higher temperature near 500 °C. Porous columnar InN structures are grown without the low-temperature nucleation layer, exhibiting a multiplied growth rate along the c-axis. The continuous InN/GaN (0 0 0 1) films are under tensile residual stress at room temperature attributed to the different thermal expansion of InN and GaN. Typical lattice constants are c = 0.5691 nm and a = 0.3544 nm for a continuous 0.9 μm film and c = 0.5700 nm and a = 0.3533 nm for a columnar 1.6 μm epilayer. A difference in the density of misfit dislocations at the InN/GaN (0001) interface between columnar and continuous films was observed, in agreement with measurements of the films’ lattice constants.

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