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Abnormal rectifying behavior of In/SrTiO3/SrTiO3:Nb capacitor

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
147
Identifiers
DOI: 10.1016/j.ssc.2008.06.029
Keywords
  • A. Nb-1.0Wt.%-Doped Srtio3
  • C. Srtio3/Srtio3:Nb Junction
  • D. Tunneling
Disciplines
  • Engineering

Abstract

Abstract In/SrTiO 3/SrTiO 3:Nb capacitors have been fabricated by depositing SrTiO 3 thin film on Nb-1 wt%-doped SrTiO 3 substrate and using In as the top electrode. The current–voltage characteristics were measured and backward rectifying characteristics are found below room temperature. The interesting observation is that at constant negative bias the leakage current increases with decreasing temperature below 150 K. Analysis shows that the abnormal increasing current was determined by the tunneling process through the SrTiO 3/SrTiO 3:Nb junction. This work demonstrates that tunneling diode may be realized in homologous perovskite oxides and engineered by distortions and defects.

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