Affordable Access

Publisher Website

Electrical transport in amorphous TexSe1− xfilms

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
71
Issue
1
Identifiers
DOI: 10.1016/0040-6090(80)90185-6

Abstract

Abstract D.c. conductivity measurements were made on thin amorphous films of Te x Se 1− x of various thicknesses in the temperature range 100–330 K. The conduction in the low temperature region is found to be due to variable range hopping while that in the high temperature region is due to thermally assisted tunnelling of the carriers in the localized states near the band edge. The effect of the addition of selenium to tellurium is to reduce the density of states near the Fermi level and to increase the conductivity activation energy. For any given composition the density of states near the Fermi level decreases while the conductivity activation energy increases with increasing thickness of the film. These results are analysed in terms of the Davis and Mott model.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Magnetoresistance measurements in amorphous TexSe1...

on Journal of Non-Crystalline Sol... Jan 01, 1985

Anomalous hall effect in amorphous CoxSi1−xfilms

on Solid State Communications Jan 01, 1982

Electrical transport properties of bulk amorphous...

on Materials Chemistry and Physic... Jan 01, 1984

Electron transport in sputtered amorphous TaxIr1−x...

on Solid State Communications Jan 01, 1986
More articles like this..