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Investigating the effect of buffer layer on magnetoresistance in organic spin-valves

Authors
Journal
Synthetic Metals
0379-6779
Publisher
Elsevier
Publication Date
Volume
176
Identifiers
DOI: 10.1016/j.synthmet.2013.06.001
Keywords
  • Organic Spintronics
  • Buffer Layer
  • Magnetoresistance
Disciplines
  • Logic

Abstract

Abstract According to the magnetoresistance (MR) experiments in the Co/Al2O3/Alq3/LSMO device, we investigate spin injection and MR of this organic device. Taking into account the spin-related resistance and partial voltage of the Al2O3 buffer layer, we obtain an apparent adjustable MR of the organic device. A large MR is predicated with an optimized buffer layer thickness. In addition, the effects of different buffer layer materials on the MR are discussed to give a suggestion on experimental investigations.

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